US 11,703,765 B2
Photoresist composition and method of manufacturing a semiconductor device
Tzu-Yang Lin, Tainan (TW); Ching-Yu Chang, Yuansun Village (TW); and Chin-Hsiang Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jan. 15, 2021, as Appl. No. 17/150,317.
Claims priority of provisional application 62/982,719, filed on Feb. 27, 2020.
Prior Publication US 2021/0311393 A1, Oct. 7, 2021
Int. Cl. G03F 7/30 (2006.01); G03F 7/36 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/004 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01)
CPC G03F 7/30 (2013.01) [G03F 7/0045 (2013.01); G03F 7/0382 (2013.01); G03F 7/0392 (2013.01); G03F 7/0397 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01); G03F 7/36 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01)] 20 Claims
 
1. A method of manufacturing a semiconductor device, comprising:
forming a photoresist layer comprising a photoresist composition over a substrate;
selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern,
wherein the photoresist composition comprises:
a photoactive compound; and
a polymer,
wherein the polymer has a polymer backbone comprising one or more groups selected from:

OG Complex Work Unit Chemistry
and wherein the polymer backbone includes at least one group selected from B, C-1, or C-2,
ALG is an acid labile group, and
X is a linking group.