US 11,703,763 B2
Method of lithography process using reticle container with discharging device
Hsiao-Lun Chang, Tainan (TW); Chueh-Chi Kuo, Kaohsiung (TW); Tsung-Yen Lee, Jhudong Township, Hsinchu County (TW); Tzung-Chi Fu, Miaoli (TW); Li-Jui Chen, Hsinchu (TW); Po-Chung Cheng, Zhongpu Township, Chiayi County (TW); and Che-Chang Hsu, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 29, 2022, as Appl. No. 17/733,616.
Application 17/733,616 is a division of application No. 17/066,181, filed on Oct. 8, 2020, granted, now 11,320,733.
Application 17/066,181 is a division of application No. 15/884,801, filed on Jan. 31, 2018, granted, now 10,802,394, issued on Oct. 13, 2020.
Claims priority of provisional application 62/589,240, filed on Nov. 21, 2017.
Prior Publication US 2022/0260901 A1, Aug. 18, 2022
Int. Cl. G03F 7/20 (2006.01); G03F 1/66 (2012.01); G03F 1/40 (2012.01); G03F 1/24 (2012.01); G03F 1/38 (2012.01)
CPC G03F 7/2002 (2013.01) [G03F 1/40 (2013.01); G03F 1/66 (2013.01); G03F 1/24 (2013.01); G03F 1/38 (2013.01)] 20 Claims
 
1. A method of lithography process, comprising:
forming a photoresist layer over a semiconductor substrate;
patterning the photoresist layer to form a pattern by emitting radiation from a radiation source via a reticle onto the photoresist layer in an exposure chamber, wherein the reticle is transferred from a reticle container to the exposure chamber; and
patterning the semiconductor substrate through the pattern of the photoresist layer,
wherein the reticle container further comprises:
a cover configured to protect a reticle;
a baseplate having:
a top surface configured to engage to the cover; and
a bottom surface opposite to the top surface; and
a discharging device on the baseplate, wherein the discharging device is configured to neutralize static charges accumulated on the reticle.