CPC G03F 7/2002 (2013.01) [G03F 1/40 (2013.01); G03F 1/66 (2013.01); G03F 1/24 (2013.01); G03F 1/38 (2013.01)] | 20 Claims |
1. A method of lithography process, comprising:
forming a photoresist layer over a semiconductor substrate;
patterning the photoresist layer to form a pattern by emitting radiation from a radiation source via a reticle onto the photoresist layer in an exposure chamber, wherein the reticle is transferred from a reticle container to the exposure chamber; and
patterning the semiconductor substrate through the pattern of the photoresist layer,
wherein the reticle container further comprises:
a cover configured to protect a reticle;
a baseplate having:
a top surface configured to engage to the cover; and
a bottom surface opposite to the top surface; and
a discharging device on the baseplate, wherein the discharging device is configured to neutralize static charges accumulated on the reticle.
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