	US 11,703,762 B2
	Method of reducing undesired light influence in extreme ultraviolet exposure
Chih-Tsung Shih, Hsinchu (TW); Chen-Ming Wang, Kaohsiung (TW); Yahru Cheng, Taipei (TW); Bo-Tsun Liu, Taipei (TW); and Tsung Chuan Lee, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Oct. 24, 2019, as Appl. No. 16/663,237.
Claims priority of provisional application 62/753,910, filed on Oct. 31, 2018.
Prior Publication US 2020/0133127 A1, Apr. 30, 2020
Int. Cl. G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/38 (2006.01)

CPC G03F 7/11 (2013.01) [G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/38 (2013.01)]

20 Claims

1. A method of generating a pattern on a photoresist layer, comprising:

disposing the photoresist layer of a resist material on a substrate;

forming a first layer to a thickness over the photoresist layer and in direct contact with the photoresist layer, wherein the first layer is a poly-silicon layer transparent for extreme ultraviolet (EUV) radiation, and wherein the first layer is opaque for deep ultraviolet (DUV) radiation, and wherein the thickness of the first layer is determined by:

selecting a first wavelength of the DUV radiation; and

determining the thickness of the first layer based on the first wavelength; and

irradiating the photoresist layer with radiation generated from an EUV radiation source, wherein the radiation is configured to pass through the first layer to expose the photoresist layer.