US 11,703,637 B2
Photonic devices
Mohammad Soltani, Belmont, MA (US); and Eduardo M. Chumbes, Andover, MA (US)
Assigned to Raytheon BBN Technologies Corp., Cambridge, MA (US); and Raytheon Company, Waltham, MA (US)
Filed by Raytheon BBN Technologies Corp., Cambridge, MA (US); and Raytheon Company, Waltham, MA (US)
Filed on Jan. 20, 2022, as Appl. No. 17/648,468.
Application 17/648,468 is a division of application No. 16/227,846, filed on Dec. 20, 2018, granted, now 11,262,604.
Claims priority of provisional application 62/670,261, filed on May 11, 2018.
Claims priority of provisional application 62/670,273, filed on May 11, 2018.
Prior Publication US 2022/0137438 A1, May 5, 2022
Int. Cl. G02B 6/12 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01S 5/343 (2006.01); G02B 6/122 (2006.01); G02F 1/017 (2006.01); H01S 5/125 (2006.01)
CPC G02B 6/12 (2013.01) [G02B 6/122 (2013.01); G02F 1/01708 (2013.01); G02F 1/01716 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01S 5/125 (2013.01); H01S 5/34333 (2013.01); G02B 2006/1213 (2013.01); G02B 2006/12035 (2013.01); G02B 2006/12121 (2013.01); G02B 2006/12142 (2013.01); G02F 2202/108 (2013.01); H01L 29/7783 (2013.01); H01S 5/343 (2013.01)] 1 Claim
OG exemplary drawing
 
1. A Group III-Nitride quantum well laser, comprising a distributed Bragg reflector (DBR), such distributed Bragg reflector (DBR) comprising Al1-xScxN, where 0<x≤0.45.