US 11,703,531 B2
Contact resistor test method and device
Shih-Chieh Lin, Hefei (CN)
Assigned to Changxin Memory Technologies, Inc., Hefei (CN)
Filed by Changxin Memory Technologies, Inc., Anhui (CN)
Filed on Oct. 1, 2021, as Appl. No. 17/491,950.
Application 17/491,950 is a continuation of application No. PCT/CN2021/113062, filed on Aug. 17, 2021.
Claims priority of application No. 202110551274.X (CN), filed on May 20, 2021.
Prior Publication US 2022/0373584 A1, Nov. 24, 2022
Int. Cl. G01R 27/08 (2006.01); G01R 27/20 (2006.01); G01R 31/28 (2006.01)
CPC G01R 27/205 (2013.01) [G01R 31/2874 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for simulating a semiconductor device, the method comprises:
determining a temperature-resistance relationship between a contact resistance of the semiconductor device and a temperature;
determining, based on the temperature-resistance relationship, a sampling contact resistance of the semiconductor device at a sampling temperature;
simulating the semiconductor device at the sampling temperature by adding a resistor comprising the sampling contact resistance to a simulation model.