CPC G01R 27/205 (2013.01) [G01R 31/2874 (2013.01)] | 20 Claims |
1. A method for simulating a semiconductor device, the method comprises:
determining a temperature-resistance relationship between a contact resistance of the semiconductor device and a temperature;
determining, based on the temperature-resistance relationship, a sampling contact resistance of the semiconductor device at a sampling temperature;
simulating the semiconductor device at the sampling temperature by adding a resistor comprising the sampling contact resistance to a simulation model.
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