US 11,702,742 B2
Methods of forming nucleation layers with halogenated silanes
Kelvin Chan, San Ramon, CA (US); and Yihong Chen, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 15, 2021, as Appl. No. 17/526,422.
Application 17/526,422 is a continuation of application No. 15/615,790, filed on Jun. 6, 2017, granted, now 11,174,551.
Claims priority of provisional application 62/346,186, filed on Jun. 6, 2016.
Prior Publication US 2022/0074050 A1, Mar. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/455 (2006.01); C23C 16/08 (2006.01); C23C 16/02 (2006.01); C23C 16/42 (2006.01)
CPC C23C 16/45527 (2013.01) [C23C 16/0272 (2013.01); C23C 16/08 (2013.01); C23C 16/42 (2013.01); C23C 16/45551 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a nucleation layer, the method comprising sequentially exposing a substrate surface to a first reactive gas and a second reactive gas to form a nucleation layer, the first reactive gas comprising a metal precursor and the second reactive gas comprising a halogenated silane, the nucleation layer having a growth rate in a range of about 0.1 Å/cycle to 10 Å/cycle.