CPC C23C 16/45527 (2013.01) [C23C 16/0272 (2013.01); C23C 16/08 (2013.01); C23C 16/42 (2013.01); C23C 16/45551 (2013.01)] | 20 Claims |
1. A method of forming a nucleation layer, the method comprising sequentially exposing a substrate surface to a first reactive gas and a second reactive gas to form a nucleation layer, the first reactive gas comprising a metal precursor and the second reactive gas comprising a halogenated silane, the nucleation layer having a growth rate in a range of about 0.1 Å/cycle to 10 Å/cycle.
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