| US 7,564,884 B1 | ||
| Ridge-stripe semiconductor laser | ||
| Keiji Ito, Osaka (Japan); Isao Kidoguchi, Hyogo (Japan); and Hiroyoshi Yajima, Kanagawa (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Sep. 21, 2006, as Appl. No. 11/524,277. | ||
| Claims priority of application No. 2005-279653 (JP), filed on Sep. 27, 2005. | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—46.01 [372/46.013; 372/45.01; 372/44.01] | 13 Claims |
| 1. A semiconductor laser having a resonator formed on a semiconductor substrate, the resonator including:
a 1st cladding layer;
an active layer disposed on the 1st cladding layer;
a 2nd cladding layer disposed on the active layer and having a stripe ridge portion;
an insulating layer disposed on the 2nd cladding layer so as not to cover an upper surface of the ridge portion; and
a front film and a rear film disposed on each end face of the resonator, wherein
the front film has a smaller reflectance than the rear film, and
the insulating layer includes, on a side close to the front film, a 1st insulating film having a 1st refractive index and, on a side close to the rear film, a 2nd insulating film having a 2nd refractive index, the 1st refractive index being larger than the 2nd refractive index.
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