| US 7,564,661 B2 | ||
| Magnetic sensing element including free layer having gradient composition and method for manufacturing the same | ||
| Yosuke Ide, Niigata-ken (Japan); Masamichi Saito, Niigata-ken (Japan); Masahiko Ishizone, Niigata-ken (Japan); and Naoya Hasegawa, Niigata-ken (Japan) | ||
| Assigned to TDK Corporation, Tokyo (Japan) | ||
| Filed on Feb. 13, 2006, as Appl. No. 11/352,958. | ||
| Claims priority of application No. 2005-046356 (JP), filed on Feb. 23, 2005. | ||
| Prior Publication US 2006/0188750 A1, Aug. 24, 2006 | ||
| Int. Cl. G11B 5/127 (2006.01) | ||
| U.S. Cl. 360—324.12 | 36 Claims |
| 1. A magnetic sensing element including a pinned magnetic layer, in which the magnetization direction is pinned in one direction,
and a free magnetic layer disposed on the pinned magnetic layer with a non-magnetic material layer therebetween, the magnetic
sensing element characterized in that:
the free magnetic layer includes a layer made of a metal compound represented by a compositional formula of (X0.67Y0.33)aZb (where a and b represent atomic percentages, and a+b=100 atomic percent) or XdYeZf (where d, e, and f represent atomic percentages, and d+e+f=100 atomic percent); and
a region, in which the atomic percentage of the element Z in the metal compound is decreased with increasing proximity to
the non-magnetic material layer side, is present in the free magnetic layer,
wherein the X is at least one element of Cu, Co, Ni, Rh, Pt, Au, Pd, Ir, Ru, Ag, Zn, Cd, and Fe, the Y is at least one element
of Mn, Fe, Ti, V, Zr, Nb, Hf, Ta, Cr, Co, and Ni, and the Z is at least one element of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and
Zn.
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