| US 7,564,139 B2 | ||
| Semiconductor device and method for manufacturing the same | ||
| Hideaki Kuwabara, Kanagawa (Japan); Junya Maruyama, Kanagawa (Japan); Yumiko Ohno, Kanagawa (Japan); Toru Takayama, Kanagawa (Japan); Yuugo Goto, Kanagawa (Japan); Etsuko Arakawa, Kanagawa (Japan); and Shunpei Yamazaki, Tokyo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Nov. 30, 2007, as Appl. No. 11/947,835. | ||
| Application 11/947835 is a division of application No. 10/735767, filed on Dec. 16, 2003, granted, now 7,303,942. | ||
| Claims priority of application No. 2002-377816 (JP), filed on Dec. 26, 2002. | ||
| Prior Publication US 2008/0088034 A1, Apr. 17, 2008 | ||
| Int. Cl. H01L 29/40 (2006.01) | ||
| U.S. Cl. 257—778 [257/782; 257/783] | 20 Claims |
| 1. A semiconductor device comprising a plurality of integrated circuit films which are bonded to a substrate,
wherein the substrate comprises multi-layered wirings,
wherein each of the plurality of integrated circuit films is electrically connected to the substrate by a protruding electrode,
wherein the plurality of integrated circuit films are bonded to the substrate by an adhesive, and
wherein a film of which thermal conductivity is 10 W/m·K or more is provided in contact with each of the integrated circuit
films in a side opposite to the protruding electrode.
|