US 7,564,101 B2
Semiconductor device for protecting a circuit formed on a semiconductor chip from destruction caused by an electrostatic discharge
Yasuhiro Yamashita, Nukata-gun (Japan); and Tadashi Kunou, Nishio (Japan)
Assigned to DENSO CORPORATION, Kariya (Japan)
Filed on Aug. 23, 2005, as Appl. No. 11/208,633.
Claims priority of application No. 2004-267207 (JP), filed on Sep. 14, 2004.
Prior Publication US 2006/0054999 A1, Mar. 16, 2006
Int. Cl. H01L 23/62 (2006.01)
U.S. Cl. 257—355  [257/358; 257/E21.356] 6 Claims
OG exemplary drawing
 
1. A semiconductor device for protecting a circuit, formed on a semiconductor chip and having an outside terminal and a ground terminal, from destruction caused by an electrostatic discharge, comprising:
a Zener diode circuit formed on the semiconductor chip to be disposed between the outside terminal and the ground terminal, the Zener diode circuit including a plurality of Zener diodes; and
a resistor formed on the semiconductor chip to be connected to the Zener diode circuit in series to increase noise tolerance of the Zener diode circuit, the resistor being formed by a wire pattern of an aluminum wire to extend along a periphery of the semiconductor chip so as to provide a resistance of approximately 2 ohms or greater.