| US 7,564,074 B2 | ||
| Semiconductor device including a lateral field-effect transistor and Schottky diode | ||
| Mariam Gergi Sadaka, Austin, Tex. (US); Berinder P. S. Brar, Newbury Park, Calif. (US); Wonill Ha, Thousand Oaks, Calif. (US); and Chanh Ngoc Minh Nguyen, Calabasas, Calif. (US) | ||
| Assigned to Flextronics International USA, Inc., San Jose, Calif. (US) | ||
| Filed on Oct. 02, 2007, as Appl. No. 11/866,249. | ||
| Application 11/866249 is a continuation in part of application No. 11/211964, filed on Aug. 25, 2005, granted, now 7,285,807, filed on Oct. 23, 2007. | ||
| Prior Publication US 2008/0048173 A1, Feb. 28, 2008 | ||
| Int. Cl. H01L 31/0328 (2006.01) | ||
| U.S. Cl. 257—194 [257/192] | 20 Claims |
| 1. A semiconductor device, comprising:
a lateral field-effect transistor, including:
a buffer layer having a contact covering a substantial portion of a bottom surface thereof,
a lateral channel above said buffer layer,
another contact above said lateral channel, and
an interconnect that connects said lateral channel to said buffer layer, operable to provide a low resistance coupling between
said contact and said lateral channel; and
a Schottky diode parallel-coupled to said lateral field-effect transistor, including:
a cathode formed from another buffer layer interposed between said buffer layer and said lateral channel,
a Schottky interconnect formed through said lateral channel and interposed between said another buffer layer and said another
contact, and
an anode formed on a surface of said Schottky interconnect operable to connect said anode to said another contact.
|