US 7,564,062 B2
	Electrode for p-type SiC
Tomohiro Sakai, Kyoto (Japan); Miki Moriyama, Kyoto (Japan); Masanori Murakami, Kyotanabe (Japan); and Naoki Shibata, Aichi (Japan)
Assigned to Toyoda Gosei, Co., Ltd., Nishikasugai-gun, Aichi (Japan)
Filed on Oct. 29, 2003, as Appl. No. 10/695,439.
Claims priority of application No. P2002-314301 (JP), filed on Oct. 29, 2002.
Prior Publication US 2006/0169985 A1, Aug. 03, 2006
Int. Cl. H01L 31/0312 (2006.01)

U.S. Cl. 257—77  [257/781]

17 Claims

1. An electrode for a p-type SiC, comprising a first electrode material, and a second electrode material of aluminum (Al), said first and second electrode materials exhibiting an eutectic reaction at a temperature of 600° C. or lower, wherein a layer made of said first electrode material is in contact with a surface of the p-type SiC, said first electrode material comprising germanium (Ge).