US 7,564,058 B2
Display device, manufacturing method thereof, and television set
Shunpei Yamazaki, Setagaya (Japan); Hironobu Shoji, Machida (Japan); Shinji Maekawa, Atsugi (Japan); Osamu Nakamura, Atsugi (Japan); Tatsuya Honda, Atsugi (Japan); Gen Fujii, Atsugi (Japan); Yukie Suzuki, Isehara (Japan); and Ikuko Kawamata, Atsugi (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan)
Filed on Jul. 25, 2005, as Appl. No. 11/187,988.
Claims priority of application No. 2004-227242 (JP), filed on Aug. 03, 2004; and application No. 2004-234617 (JP), filed on Aug. 11, 2004.
Prior Publication US 2006/0027804 A1, Feb. 09, 2006
Int. Cl. H01L 27/14 (2006.01)
U.S. Cl. 257—72  [257/E27.131] 29 Claims
OG exemplary drawing
 
1. A display device comprising:
a gate electrode formed on an insulating surface;
a pixel electrode formed on the insulating surface;
a first gate insulating layer formed over the gate electrode;
a crystalline semiconductor layer formed over the first gate insulating layer;
a first semiconductor layer having one conductivity type formed on the crystalline semiconductor layer;
a second semiconductor layer having one conductivity type formed on the crystalline semiconductor layer;
a source electrode formed on the first semiconductor layer having one conductivity type;
a drain electrode formed on the second semiconductor layer having one conductivity type;
a second insulating layer formed over the source electrode, the drain electrode layer, and the pixel electrode;
a first opening formed in the second insulating layer to reach the source electrode or the drain electrode;
a second opening formed in the first gate insulating layer and the second insulating layer to reach the pixel electrode; and
a wiring layer formed in the first opening and the second opening to electrically connect the source electrode or the drain electrode to the pixel electrode,
wherein the gate electrode and the pixel electrode are formed with an identical material and are formed in the same plane.