| US 7,564,057 B1 | ||
| Semiconductor device having an aluminum nitride film | ||
| Shunpei Yamazaki, Tokyo (Japan); Hongyong Zhang, Kanagawa (Japan); and Yasuhiko Takemura, Shiga (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Apr. 22, 1999, as Appl. No. 9/295,607. | ||
| Application 09/295607 is a division of application No. 09/255777, filed on Feb. 23, 1999, granted, now 6,964,890. | ||
| Application 09/255777 is a division of application No. 08/757616, filed on Nov. 29, 1996, granted, now 5,946,561. | ||
| Application 08/757616 is a continuation of application No. 08/085931, filed on Jul. 06, 1993, abandoned. | ||
| Application 08/085931 is a continuation in part of application No. 07/853690, filed on Mar. 17, 1992, granted, now 5,313,076. | ||
| Claims priority of application No. 4-201932 (JP), filed on Jul. 06, 1992; application No. 4-218324 (JP), filed on Jul. 24, 1992; and application No. 5-45786 (JP), filed on Feb. 19, 1993. | ||
| Int. Cl. H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 29/76 (2006.01) | ||
| U.S. Cl. 257—72 [257/59; 257/66] | 8 Claims |
| 1. A semiconductor device comprising:
a substrate having a front surface and a rear surface;
a first insulating film comprising silicon oxide provided over said front surface of said substrate;
a second insulating film comprising aluminum nitride and oxygen provided over said first insulating film;
a third insulating film comprising oxide provided over said second insulating film;
a transistor provided over said third insulating film, said transistor having at least a channel formation region, a source
region, a drain region, a gate insulating film adjacent to said channel formation region, and a gate electrode adjacent to
said channel formation region with said gate insulating film interposed therebetween;
an interlayer insulating film comprising a leveled upper surface over said transistor; and
a pixel electrode over said interlayer insulating film,
wherein crystallinity of said source region or the drain region is higher than crystallinity of said channel region.
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