| US 7,564,054 B2 | ||
| Thin film forming device, method of forming a thin film, and self-light-emitting device | ||
| Shunpei Yamazaki, Tokyo (Japan); Masaaki Hiroki, Kanagawa (Japan); and Noriko Ishimaru, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., (Japan) | ||
| Filed on Mar. 02, 2006, as Appl. No. 11/366,058. | ||
| Application 10/790972 is a division of application No. 09/798608, filed on Mar. 02, 2001, granted, now 6,699,739, filed on Mar. 02, 2004. | ||
| Application 11/366058 is a continuation of application No. 10/790972, filed on Mar. 02, 2004. | ||
| Claims priority of application No. 2000-061274 (JP), filed on Mar. 06, 2000; and application No. 2000-087696 (JP), filed on Mar. 27, 2000. | ||
| Prior Publication US 2006/0197080 A1, Sep. 07, 2006 | ||
| Int. Cl. H01L 29/08 (2006.01) | ||
| U.S. Cl. 257—40 [257/88; 257/E51.022] | 43 Claims |
| 1. A light emitting device comprising:
a first bank including an inorganic material formed on a first electrode;
a second bank including an organic material formed over the first bank;
a layer including a light-emitting organic material in contact with the first bank; and
a second electrode in contact with the first bank over the layer,
wherein a thickness of the first bank is larger than a thickness by laminating the layer and the second electrode, and
wherein a side face of the layer and a side face of the second electrode are aligned against a side face of the first bank.
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