| US 7,563,716 B2 | ||
| Polishing method | ||
| Seiichi Kondo, Kokubunji (Japan); Yoshio Homma, Tokyo (Japan); Noriyuki Sakuma, Hachiouji (Japan); Kenichi Takeda, Tokorozawa (Japan); and Kenji Hinode, Hachiouji (Japan) | ||
| Assigned to Renesas Technology Corp., Tokyo (Japan) | ||
| Filed on Mar. 29, 2007, as Appl. No. 11/693,383. | ||
| Application 11/693383 is a division of application No. 11/581375, filed on Oct. 17, 2006, granted, now 7,279,425. | ||
| Application 11/581375 is a continuation of application No. 10/441063, filed on May 20, 2003, granted, now 7,132,367. | ||
| Application 10/441063 is a continuation of application No. 09/618999, filed on Jul. 18, 2000, granted, now 6,596,638. | ||
| Application 09/618999 is a continuation of application No. 09/182438, filed on Oct. 30, 1998, granted, now 6,117,775. | ||
| Claims priority of application No. 9-299937 (JP), filed on Oct. 31, 1997. | ||
| Prior Publication US 2007/0167015 A1, Jul. 19, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—691 [438/693; 438/695; 438/697; 438/754] | 5 Claims |
| 1. A polishing method for removing at least part of a metal film on an insulating film, comprising:
providing a semiconductor substrate with the insulating film having an opening for a plug and being formed over the semiconductor
substrate, the metal film being provided in the opening; and
chemically mechanically polishing the metal film on the insulating film using a polishing solution which additionally has
included therein less than 1 wt % of a polishing abrasive, and includes an oxidizer, a substance which renders an oxide water-soluble,
and a surfactant, said solution having a pH and oxidation-reduction potential in the domain of corrosion of said metal film,
said chemical mechanical polishing leaving a plug of said metal film in said opening;
wherein the surfactant is mechanically rubbed out from a surface of the metal film and a metal oxide is made soluble to a
substance for polishing the metal film, and
wherein said metal film is one selected from the group consisting of a tungsten film, a tungsten alloy film, and a tungsten
compound film having tungsten as its principal component.
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