| US 7,563,660 B2 | ||
| Silicon film, crystalline film and method for manufacturing the same | ||
| Jai-Yong Han, Suwon-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (Korea, Republic of) | ||
| Filed on Jan. 06, 2006, as Appl. No. 11/326,171. | ||
| Claims priority of application No. 10-2005-0001946 (KR), filed on Jan. 08, 2005. | ||
| Prior Publication US 2006/0154452 A1, Jul. 13, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—166 [257/E29.151] | 23 Claims |
| 1. A method of manufacturing a silicon film comprising:
forming an insulating substrate;
forming a buffer layer on the insulating substrate, wherein the buffer layer is a material with a lower melting point than
silicon, the material being selected from the group consisting of metals, compounds or oxides;
crystallizing the buffer layer by annealing; and
forming a silicon layer on the crystallized buffer layer.
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