| US 7,563,659 B2 | ||
| Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same | ||
| Jang-yeon Kwon, Seoul (Korea, Republic of); Min-koo Han, Seoul (Korea, Republic of); Se-young Cho, Seoul (Korea, Republic of); Kyung-bae Park, Seoul (Korea, Republic of); Do-young Kim, Gyeonggi-do (Korea, Republic of); Min-cheol Lee, Seoul (Korea, Republic of); Sang-myeon Han, Seoul (Korea, Republic of); Takashi Noguchi, Gyeonggi-do (Korea, Republic of); Young-soo Park, Gyeonggi-do (Korea, Republic of); and Ji-sim Jung, Incheon-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 06, 2004, as Appl. No. 11/3,326. | ||
| Claims priority of application No. 10-2003-0088423 (KR), filed on Dec. 06, 2003. | ||
| Prior Publication US 2006/0008957 A1, Jan. 12, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—166 [438/487; 257/E21.001] | 5 Claims |
| 1. A method of fabricating a silicon thin film, the method comprising forming the silicon thin film on a substrate by inductively
coupled plasma chemical vapor deposition (ICP-CVD) using a diluted He,
wherein the diluted He is an He/SiH4 composition and a ratio of He to SiH4 is in a range from 6 to 12 and a deposition rate of silicon by the ICP-CVD is 2.8 Å/sec.
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