| US 7,563,658 B2 | ||
| Method for manufacturing semiconductor device | ||
| Akihiro Ishizuka, Kanagawa (Japan); Satoru Okamoto, Kanagawa (Japan); Shigeharu Monoe, Tochigi (Japan); and Shunpei Yamazaki, Tokyo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Dec. 22, 2005, as Appl. No. 11/314,011. | ||
| Claims priority of application No. 2004-377688 (JP), filed on Dec. 27, 2004. | ||
| Prior Publication US 2007/0015307 A1, Jan. 18, 2007 | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—162 [438/166; 438/438; 438/473; 438/486; 257/E21.133; 257/E21.413; 257/E21.414; 257/E27.111; 257/E27.113; 257/E29.151; 257/E29.275; 257/E29.278; 257/E29.282; 257/E29.293] | 19 Claims |
| 1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a transparent conductive film;
forming a first conductive film over the transparent conductive film;
forming a second conductive film over the first conductive film;
forming a mask over the second conductive film;
etching the second conductive film with a gas including chlorine using the mask; and
etching the first conductive film with a gas including fluorine.
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