| US 7,562,446 B2 | ||
| Method for manufacturing substrate with cavity | ||
| Hoe-Ku Jung, Daejeon (Korea, Republic of); Myung-Sam Kang, Daejeon (Korea, Republic of); and Jung-Hyun Park, Daejeon (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon (Korea, Republic of) | ||
| Filed on Sep. 21, 2006, as Appl. No. 11/524,403. | ||
| Claims priority of application No. 10-2005-0088091 (KR), filed on Sep. 22, 2005. | ||
| Prior Publication US 2007/0065988 A1, Mar. 22, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H05K 3/02 (2006.01); H05K 3/10 (2006.01) | ||
| U.S. Cl. 29—846 [29/831; 29/832; 29/852; 174/255] | 12 Claims |
| 1. A method for manufacturing a substrate, the substrate having a cavity, the method comprising:
forming a first circuit pattern on both sides of a seed layer by use of a first dry film, the first dry film is formed on
both sides of the seed layer in order to form the first circuit pattern;
laminating a second dry film on the first dry film on both sides of the seed layer, the thickness of the second dry film corresponding
to the depth of the cavity to be formed;
laminating a dielectric layer on an area that is surrounding the second dry film on both sides of the seed layer, the thickness
of the dielectric layer corresponding to the depth of the cavity to be formed;
laminating on the dielectric layer and a second dry film a copper foil laminated master having a second circuit pattern; and
forming the cavity by peeling off the first dry film and the second dry film from the dielectric layer and copper foil laminated
master, respectively, after removing the seed layer from the first dry film and the first circuit pattern.
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