| US 7,561,406 B2 | ||
| Nickel substrate thin film capacitor and method of manufacturing nickel substrate thin film capacitor | ||
| Hitoshi Saita, Tokyo (Japan); Yuko Saya, Tokyo (Japan); Kiyoshi Uchida, Tokyo (Japan); and Kenji Horino, Tokyo (Japan) | ||
| Assigned to TDK Corporation, Tokyo (Japan) | ||
| Filed on Mar. 29, 2007, as Appl. No. 11/730,154. | ||
| Claims priority of application No. 2006-95436 (JP), filed on Mar. 30, 2006; and application No. 2007-87222 (JP), filed on Mar. 29, 2007. | ||
| Prior Publication US 2007/0230086 A1, Oct. 04, 2007 | ||
| Int. Cl. H01G 4/008 (2006.01); H01G 4/06 (2006.01); H01G 7/00 (2006.01) | ||
| U.S. Cl. 361—305 [361/311; 29/25.42] | 9 Claims |
| 1. A thin film capacitor comprising:
a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and
a dielectric layer and an electrode layer disposed in this order on the nickel substrate,
wherein the nickel substrate includes the impurities of iron (Fe) at 9 to 65 ppm, copper (Cu) at 6 to 25 ppm, manganese (Mn)
at 2 to 10 ppm, and silicon (Si) at 2 to 6 ppm; and
the nickel substrate can include one or more impurities selected from the group consisting of impurities of titanium (Ti)
at 65 ppm or below, aluminum (Al) at 65 ppm or below, and chromium (Cr) at 65 ppm or below.
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