| US 7,561,383 B2 | ||
| Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system | ||
| Yuuzo Kamiguchi, Yokohama (Japan); Hiromi Yuasa, Yokohama (Japan); Tomohiko Nagata, Yokohama (Japan); Hiroaki Yoda, Kawasaki (Japan); Katsuhiko Koui, Kawasaki (Japan); Masatoshi Yoshikawa, Yokohama (Japan); Hitoshi Iwasaki, Yokosuka (Japan); Masashi Sahashi, Yokohama (Japan); and Masayuki Takagishi, Kawasaki (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 17, 2008, as Appl. No. 12/212,162. | ||
| Application 12/212162 is a division of application No. 11/389175, filed on Mar. 27, 2006, granted, now 7,515,386. | ||
| Application 11/389175 is a division of application No. 11/080485, filed on Mar. 16, 2005, granted, now 7,046,489. | ||
| Application 11/080485 is a continuation of application No. 09/981987, filed on Oct. 19, 2001, granted, now 6,937,446. | ||
| Claims priority of application No. 2000-321171 (JP), filed on Oct. 20, 2000. | ||
| Prior Publication US 2009/0021869 A1, Jan. 22, 2009 | ||
| Int. Cl. G11B 5/127 (2006.01) | ||
| U.S. Cl. 360—324 | 7 Claims |
| 1. A magnetoresistance effect element comprising:
a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of
magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the
direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer provided
between the magnetization fixed layer and the magnetization free layer;
a pair of electrodes which are electrically connected to the magnetoresistance effect film and configured to apply a current
in a direction perpendicular to the plane of the magnetoresistance effect film; and
a resistance regulating layer containing an oxide, a nitride, a fluoride, a carbide or a boride;
the resistance regulating layer formed in the non-magnetic intermediate layer or on the interface between the non-magnetic
intermediate layer and at least one of the magnetization fixed layer and the magnetization free layer, and
the ferromagnetic film of at least one of the magnetization fixed layer and the magnetization free layer comprising a stacked
structure which has at least a non-magnetic layer and two first magnetic layers sandwiching the non-magnetic layer, magnetizations
of the first magnetic layers are substantially parallel to each other and substantially arranged in the same direction.
|