| US 7,561,009 B2 | ||
| Film bulk acoustic resonator (FBAR) devices with temperature compensation | ||
| John D. Larson, III, Palo Alto, Calif. (US); John Choy, Westminster, Colo. (US); Donald E. Lee, Fort Collins, Colo. (US); Kevin J. Grannen, Thornton, Colo. (US); Hongjun Feng, Windsor, Colo. (US); Carrie A. Rogers, Fort Collins, Colo. (US); and Urupattur C. Sridharan, San Jose, Calif. (US) | ||
| Assigned to Avago Technologies General IP (Singapore) Pte. Ltd., Singapore (Singapore) | ||
| Filed on Nov. 30, 2005, as Appl. No. 11/291,674. | ||
| Prior Publication US 2007/0120625 A1, May 31, 2007 | ||
| Int. Cl. H03H 9/15 (2006.01); H03H 9/205 (2006.01); H01L 41/083 (2006.01) | ||
| U.S. Cl. 333—187 [333/189] | 38 Claims |
| 1. A temperature-compensated film bulk acoustic resonator (FBAR) device, comprising:
an FBAR stack, comprising:
an FBAR characterized by a resonant frequency having a temperature coefficient, the FBAR comprising opposed planar electrodes
and a piezoelectric element between the electrodes, the piezoelectric element having a temperature coefficient on which the
temperature coefficient of the resonant frequency depends at least in part, and a temperature-compensating layer between the
electrodes comprising doped silicon dioxide.
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