| US 7,560,816 B2 | ||
| Small grain size, conformal aluminum interconnects and method for their formation | ||
| Wing-Cheong Gilbert Lai, Boise, Id. (US); and Gurtej Singh Sandhu, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Aug. 31, 2007, as Appl. No. 11/897,842. | ||
| Application 10/899736 is a division of application No. 09/782498, filed on Feb. 13, 2001, granted, now 6,774,487. | ||
| Application 09/782498 is a division of application No. 09/146509, filed on Sep. 03, 1998, granted, now 6,187,673. | ||
| Application 11/897842 is a continuation of application No. 10/899736, filed on Jul. 27, 2004, granted, now 7,276,795. | ||
| Prior Publication US 2007/0296084 A1, Dec. 27, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 23/58 (2006.01); H01L 29/40 (2006.01) | ||
| U.S. Cl. 257—751 | 27 Claims |
| 1. An interconnect architecture, comprising:
an active device region;
an interconnect via adjoining the active device region, the via formed in an electrical insulator;
a damascene structure formed from the interconnect via, wherein the damascene structure includes a refractory metal nitride
diffusion barrier adjacent the active device region; and
wherein a mixed orientation metal nitride layer is in contact with the refractory metal nitride diffusion barrier, the mixed
orientation metal nitride layer has grain orientation of<111> and <200>.
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