| US 7,560,777 B1 | ||
| Protection element and method of manufacture | ||
| Akram A. Salman, Santa Clara, Calif. (US); and Stephen G. Beebe, Los Altos, Calif. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Sunnyvale, Calif. (US) | ||
| Filed on Nov. 08, 2005, as Appl. No. 11/270,029. | ||
| Int. Cl. H01L 23/62 (2006.01) | ||
| U.S. Cl. 257—355 [257/360] | 13 Claims |
| 1. An ElectroStatic Discharge (ESD) protection element, comprising:
a semiconductor-on-insulator substrate of a first conductivity type having a major surface;
a first doped region of the first conductivity type extending from a first portion of the major surface into the semiconductor-on-insulator
substrate;
a second doped region of a second conductivity type extending from a second portion of the major surface into the semiconductor-on-insulator
substrate, wherein the first and second doped regions are laterally spaced apart from each other by a diode multiplication
region including a third portion of the major surface, and wherein the third portion of the major surface is contiguous with
the first and second portions of the major surface; and
a first gate structure asymmetrically positioned on the diode multiplication region.
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