| US 7,560,749 B2 | ||
| Light emitting material, light emitting device, and electronic device | ||
| Junichiro Sakata, Kanagawa (Japan); Takahiro Kawakami, Kanagawa (Japan); Yoshiaki Yamamoto, Kanagawa (Japan); Miki Katayama, Kanagawa (Japan); and Kohei Yokoyama, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Jan. 19, 2007, as Appl. No. 11/625,114. | ||
| Claims priority of application No. 2006-019869 (JP), filed on Jan. 27, 2006. | ||
| Prior Publication US 2007/0176536 A1, Aug. 02, 2007 | ||
| Int. Cl. H01J 1/62 (2006.01) | ||
| U.S. Cl. 257—102 [257/103; 257/E33.019; 428/690; 252/301.6 R; 252/301.6 S; 252/301.6 P; 252/301.6 F; 252/301.4 P; 252/301.4 S; 252/301.4 H] | 13 Claims |
| 3. A light emitting device comprising:
a pair of electrodes; a light emitting layer including a light emitting material between the pair of electrodes; and
an insulating layer between the light emitting layer and one of the pair of electrodes,
wherein the light emitting material comprises a base material, a material, and an impurity element,
wherein the material is at least one selected from the group consisting of copper fluoride, copper chloride, copper iodide,
copper bromide, copper nitride, copper phosphide, silver fluoride, silver chloride, silver iodide, silver bromide, gold chloride,
gold bromide, platinum chloride, and a combination thereof,
wherein the base material is a material selected from the group consisting of zinc sulfide, cadmium sulfide, calcium sulfide,
yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium
nitride, indium nitride, zinc selenide, zinc telluride, strontium gallium sulfide, and a combination thereof, and
wherein the impurity element at least an element selected from the group consisting of lithium, sodium, potassium, rubidium,
cesium, nitrogen, phosphorus, arsenic, antimony, and bismuth.
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