| US 7,560,746 B2 | ||
| Light emitting diodes and display apparatuses using the same | ||
| Jae-hee Cho, Yongin-si (Korea, Republic of); Martin Schubert, Troy, N.Y. (US); E. Fred Schubert, Troy, N.Y. (US); Jong-kyu Kim, Troy, N.Y. (US); and Cheol-soo Sone, Yongin-si (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Gyeonggi-do (Korea, Republic of); and Rensselaer Polytechnic Institute, Troy, N.Y. (US) | ||
| Filed on Feb. 28, 2007, as Appl. No. 11/711,877. | ||
| Prior Publication US 2008/0204626 A1, Aug. 28, 2008 | ||
| Int. Cl. H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—98 [349/61] | 21 Claims |
| 1. A light emitting diode comprising:
a first semiconductor layer for supplying electrons;
a second semiconductor layer for supplying holes, the second semiconductor layer being different from the first;
an active layer formed between the first and second semiconductor layers, the active layer receiving the electrons and the
holes, and emitting light in response to coupling between the electrons and the holes;
a first reflective layer formed on a bottom portion of the first semiconductor layer; and
a second reflective layer formed on a top portion of the second semiconductor layer; wherein
the light emitted from the active layer exits at a side of the active layer.
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