| US 7,560,721 B1 | ||
| Phase change material with filament electrode | ||
| Matthew J. Breitwisch, Yorktown Heights, N.Y. (US); Roger W. Cheek, Somers, N.Y. (US); Eric A. Joseph, White Plains, N.Y. (US); Chung H. Lam, Peekskill, N.Y. (US); Alejandro G. Schrott, New York, N.Y. (US); and Gerhard Ingmar Meijer, Zurich (Switzerland) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Feb. 21, 2008, as Appl. No. 12/35,237. | ||
| Int. Cl. H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—2 | 15 Claims |
| 1. A memory device comprising:
a phase change memory cell;
a first electrode; and
a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein
at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor
material that provides electrical communication between the phase change memory cell to the first electrode.
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