| US 7,560,038 B2 | ||
| Thin film forming method and system | ||
| Hongxin Fang, Hong Kong (China); Hongtao Ma, Dongguan (China); Baiqing Zhang, Dongguan (China); Baohua Chen, Dongguan (China); and Somen Choudhury, Hong Kong (China) | ||
| Assigned to SAE Magnetics (H.K.) Ltd., Kwai Chung, N.T., Hong Kong (China) | ||
| Filed on Sep. 22, 2004, as Appl. No. 10/945,873. | ||
| Prior Publication US 2006/0060559 A1, Mar. 23, 2006 | ||
| Int. Cl. B44C 1/22 (2006.01); C23F 1/00 (2006.01); C23C 16/00 (2006.01) | ||
| U.S. Cl. 216—22 [216/37; 118/715; 156/345.3] | 9 Claims |
| 1. A film forming method comprises: (1) holding at least one object in a chamber; (2) depositing a film-forming material on
the object; and (3) etching the film-forming material while depositing is conducted,
wherein the depositing step (2) comprises (a) providing a target material for forming a film, (b) irradiating an ion beam
to bombard the target material to form a first deposition beam, and (c) bombarding the object with the first deposition beam,
and
wherein the etching step comprises (i) providing an atmosphere of inert or reactive gas at a predetermined pressure in a chamber;
and (ii) ionizing the atmosphere to generate an etching ion beam to bombard the object, and
wherein the first deposition beam and the etching ion beam bombard the object along different paths, and
wherein a second film is deposited on the film by a second deposition source bombarding the object, the second deposition
source is an ion beam source using a hydrocarbon as precursor with the aid of another ion beam source, and accordingly the
second film is a diamond like carbon film.
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