| US 7,559,527 B2 | ||
| Diffusion bonded fluid flow manifold with partially integrated inter-active component | ||
| Mark Crockett, Foster City, Calif. (US); John W. Lane, San Jose, Calif. (US); Micahel DeChellis, Austin, Tex. (US); Chris Melcer, Sunnyvale, Calif. (US); Erica Porras, San Jose, Calif. (US); Aneesh Khullar, Sunnyvale, Calif. (US); and Balarabe N. Mohammed, Union City, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Apr. 19, 2007, as Appl. No. 11/788,428. | ||
| Application 11/788428 is a continuation of application No. 10/617950, filed on Jul. 12, 2003, abandoned. | ||
| Application 10/617950 is a continuation in part of application No. 10/328135, filed on Dec. 20, 2002, granted, now 6,736,370, filed on May 18, 2004. | ||
| Prior Publication US 2007/0226973 A1, Oct. 04, 2007 | ||
| Int. Cl. F16K 31/00 (2006.01) | ||
| U.S. Cl. 251—63.5 [228/195; 29/891.131] | 9 Claims |
| 1. A method of fabricating a diffusion bonded gas distribution assembly for use in semiconductor processing equipment, wherein
said method comprises:
a) providing a plurality of metal layers, where an average roughness of a bonding surface of a metal layer ranges from about
0.1 microinches Ra to about 30 microinches Ra, and where the thickness of at least one of said plurality of metal layers ranges
from about 0.0005 inch to about 0.06 inch;
b) chemically or electrochemically etching at least one feature through at least one of said metal layers;
c) aligning said plurality of metal layers and at least a portion of a component, so that a gas distribution assembly including
said component will be formed upon diffusion bonding; and
d) simultaneously diffusion bonding said aligned plurality of metal layers and said at least a portion of said component device,
thereby forming a gas distribution assembly comprising said component and said metal layers.
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