| US 7,557,453 B2 | ||
| Semiconductor device, method of manufacturing a semiconductor device and substrate to be used to manufacture a semiconductor device | ||
| Junichi Nakao, Hyogo-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Oct. 30, 2006, as Appl. No. 11/554,345. | ||
| Claims priority of application No. 2005-320536 (JP), filed on Nov. 04, 2005. | ||
| Prior Publication US 2007/0102813 A1, May 10, 2007 | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01) | ||
| U.S. Cl. 257—781 [257/750; 257/786; 257/773; 257/E23.041] | 12 Claims |
| 1. A semiconductor device, comprising:
a first electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked in
order, the first electrode-lead having a first surface and a second surface on opposite sides;
a second electrode-lead having a first Au film, a first Ni film, a Cu film, a second Au film and a second Ni film stacked
in order, the second electrode-lead disposed apart from the first electrode-lead, the second electrode-lead having a first
surface and a second surface on opposite sides;
a semiconductor chip having a first electrode formed on a first surface of the semiconductor chip and a second electrode formed
on a second surface of the semiconductor chip, the first electrode being formed on an opposite side of the second electrode,
the semiconductor chip mounted on the first electrode-lead, the second electrode facing the first surface of the first electrode-lead;
a first connection conductor connecting the first electrode of the semiconductor chip to the first surface of the second electrode-lead;
and
a package housing the first electrode-lead, the second electrode-lead and the semiconductor chip, the second surface of the
first electrode-lead and the second surface of the second electrode-lead being exposed at a surface of the package.
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