| US 7,557,421 B1 | ||
| Hybrid radio frequency integrated circuit using gallium nitride epitaxy layers grown on a donor substrate | ||
| Jeffrey B. Shealy, Huntersville, N.C. (US); Matthew Poulton, Concord, N.C. (US); and Ramakrishna Vetury, Charlotte, N.C. (US) | ||
| Assigned to RF Micro Devices, Inc., Greensboro, N.C. (US) | ||
| Filed on Jul. 20, 2006, as Appl. No. 11/458,833. | ||
| Int. Cl. H01L 29/20 (2006.01) | ||
| U.S. Cl. 257—499 [257/226; 257/615; 257/E31.096; 257/E25.029] | 19 Claims |
| 1. A hybrid integrated circuit comprising:
a metallic mounting structure;
a high performance semiconductor die mounted on the metallic mounting structure and comprising:
a donor substrate comprising at least one of a group consisting of silicon carbide, sapphire, aluminum nitride, and silicon;
and
epitaxy layers grown on the donor substrate and comprising gallium nitride;
a supporting semiconductor die mounted on the metallic mounting structure; and
a transistor circuit comprising:
at least one transistor formed in the high performance semiconductor die; and
at least one passive component formed in the supporting semiconductor die and electrically coupled to the at least one transistor.
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