US 7,557,385 B2
Electronic devices formed on substrates and their fabrication methods
Takashi Katoda, 4804-83, Ikku, Kochi-shi, Kochi 780-8130 (Japan)
Assigned to Takashi Katoda, Kochi-shi (Japan)
Filed on Jan. 12, 2006, as Appl. No. 11/330,153.
Claims priority of application No. 2005-011248 (JP), filed on Jan. 19, 2005.
Prior Publication US 2006/0157695 A1, Jul. 20, 2006
Int. Cl. H01L 29/74 (2006.01)
U.S. Cl. 257—103  [257/12; 257/183; 257/E29.094; 257/E29.098; 257/E29.143; 257/E29.148] 16 Claims
OG exemplary drawing
 
1. A semiconductor electronic device which has a layer of crystalline molybdenum oxide formed directly by deposition on a substrate which comprises material selected from IV element semiconductors, III-V compound semiconductors, IV compound semiconductors, organic semiconductors and their derivatives or glasses.