| US 7,557,294 B2 | ||
| Solar cell and production thereof | ||
| Yasuhito Takahashi, Hirakata (Japan); and Yukiyoshi Ono, Bunkyo-ku (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Appl. No. 10/564,116 PCT Filed Jan. 12, 2005, PCT No. PCT/JP2005/000247 § 371(c)(1), (2), (4) Date Jan. 10, 2006, PCT Pub. No. WO2005/069386, PCT Pub. Date Jul. 28, 2005. |
||
| Claims priority of application No. 2004-005768 (JP), filed on Jan. 13, 2004. | ||
| Prior Publication US 2007/0295396 A1, Dec. 27, 2007 | ||
| Int. Cl. H01L 31/00 (2006.01) | ||
| U.S. Cl. 136—265 [136/264] | 20 Claims |
| 1. A solar cell comprising:
a substrate;
a conductive film formed on the substrate;
a compound semiconductor layer formed on the conductive film, the compound semiconductor layer including a p-type semiconductor
crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb;
a n-type window layer formed on the compound semiconductor layer, the n-type window layer having an aperture; and
a n-type transparent conductive film formed on the n-type window layer and on a portion of the compound semiconductor layer
at the aperture of the n-type window layer,
wherein
the compound semiconductor layer includes a high-resistance part, the high-resistance part being located in a portion of the
compound semiconductor layer in the vicinity of a surface thereof on a side opposite to the conductive film, the high-resistance
part containing a n-type impurity doped in the p-type semiconductor crystal, and
the high-resistance part is located under the aperture of the n-type window layer.
|