| US 7,557,040 B2 | ||
| Method of manufacture of semiconductor device | ||
| Hiroshi Itokawa, Yokohama (Japan); Yoshimasa Kawase, Yokohama (Japan); Toshihiko Iinuma, Yokohama (Japan); Haruko Akutsu, Yokosuka (Japan); and Kyoichi Suguro, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Dec. 26, 2006, as Appl. No. 11/644,887. | ||
| Claims priority of application No. 2005-373034 (JP), filed on Dec. 26, 2005. | ||
| Prior Publication US 2007/0166977 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—682 [438/655] | 15 Claims |
| 1. A method of manufacture of a semiconductor device comprising the steps of:
forming a gate electrode containing silicon above the surface of a semiconductor substrate containing silicon;
forming a sidewall insulating film on the sidewall of the gate electrode;
forming a film of metal on the semiconductor substrate to cover the gate electrode and the sidewall insulating film; and
heating the front and back sides of the semiconductor substrate through heat conduction by an ambient gas to cause the metal
film to react with silicon contained in the semiconductor substrate and the gate electrode to thereby transform the metal
film into a metal silicide film.
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