| US 7,557,027 B2 | ||
| Method of producing microcystalline silicon germanium suitable for micromachining | ||
| Ann Witvrouw, Herent (Belgium); Maria Gromova, Leuven (Belgium); Marc Schaekers, Leuven (Belgium); Serge Vanhaelemeersch, Leuven (Belgium); and Brenda Eyckens, Leuven (Belgium) | ||
| Assigned to Interuniversitair Microelektronica Centrum, Leuven (Belgium) | ||
| Filed on Jan. 24, 2006, as Appl. No. 11/338,080. | ||
| Claims priority of provisional application 60/646758, filed on Jan. 24, 2005. | ||
| Claims priority of provisional application 60/700899, filed on Jul. 19, 2005. | ||
| Prior Publication US 2006/0166467 A1, Jul. 27, 2006 | ||
| Int. Cl. H01L 21/28 (2006.01); H01L 21/3205 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 29/06 (2006.01) | ||
| U.S. Cl. 438—602 [438/478; 438/485; 438/503; 257/19] | 20 Claims |
| 1. A method of forming a structural Silicon Germanium (SiGe) layer, the structural SiGe layer having a predetermined average
internal stress, the method comprising:
providing a substrate that includes a sacrificial layer;
providing a silicon source and a germanium source in a reaction zone that contains the substrate, wherein the silicon source
and germanium source together are at a first concentration;
diluting the first concentration with hydrogen, wherein the hydrogen is at a second concentration that is at least ten times
greater than the first concentration;
reacting the silicon source and the germanium source, wherein the reacting is performed in the presence of a plasma so as
to deposit the structural SiGe layer on top of the sacrificial layer; and
removing the sacrificial layer.
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