| US 7,557,022 B2 | ||
| Implantation of carbon and/or fluorine in NMOS fabrication | ||
| Mahalingam Nandakumar, Richardson, Tex. (US); Amitabh Jain, Allen, Tex. (US); and Lahir Shaik Adam, Plano, Tex. (US) | ||
| Assigned to Texas Instruments Incorporated, Dallas, Tex. (US) | ||
| Filed on Jun. 13, 2006, as Appl. No. 11/451,919. | ||
| Prior Publication US 2007/0287274 A1, Dec. 13, 2007 | ||
| Int. Cl. H01L 21/425 (2006.01) | ||
| U.S. Cl. 438—527 [438/514; 438/305; 257/E21.443] | 18 Claims |
| 1. A method of forming an NMOS transistor comprising:
performing an LDD implantation to establish source/drain extension regions in a substrate on either side of a gate structure
formed on the substrate, where the LDD implantation comprises:
implanting at least one of arsenic, phosphorous and antimony; and
implanting at least one of carbon, atomic fluorine and molecular fluorine (F2);
forming source/drain regions in the substrate on ether side of the gate structure, the source/drain regions being distanced
from the gate structure further than the source/drain extension regions; and forming halo regions in the substrate on ether
side of the gate structure, the source/drain regions being distanced from the gate structure further than the halo regions,
forming the halo regions comprising:
implanting at least one of arsenic, phosphorous and antimony; and
implanting at least one of boron, indium and/or boron di-fluoride (BF2).
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