| US 7,557,021 B2 | ||
| Highly doped gate electrode made by rapidly melting and resolidifying the gate electrode | ||
| Amitabh Jain, Allen, Tex. (US) | ||
| Assigned to Texas Instruments Incorporated, Dallas, Tex. (US) | ||
| Filed on Jul. 06, 2005, as Appl. No. 11/175,682. | ||
| Prior Publication US 2007/0020900 A1, Jan. 25, 2007 | ||
| Int. Cl. H01L 21/265 (2006.01) | ||
| U.S. Cl. 438—519 [438/518; 257/E21.615] | 12 Claims |
| 1. A method for fabricating a microelectronic device, comprising:
implanting a dopant into a gate electrode located on a substrate, said gate electrode having a melting point below a melting
point of said substrate;
melting said gate electrode to allow said dopant to diffuse throughout said gate electrode; and
re-solidifying said gate electrode, to increase dopant occupied substitutional sites within said gate electrode, wherein the
melting and the re-solidifying are performed after source/drain and source/drain extension implanting.
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