| US 7,557,011 B2 | ||
| Semiconductor device and method for fabricating the same | ||
| Takumi Mikawa, Otsu (Japan); Yuji Judai, Uji (Japan); and Toshie Kutsunai, Kusatsu (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Nov. 17, 2005, as Appl. No. 11/280,250. | ||
| Application 11/280250 is a division of application No. 10/823797, filed on Apr. 14, 2004, granted, now 7,180,122. | ||
| Application 10/823797 is a continuation of application No. PCT/JP2004/003450, filed on Mar. 12, 2004. | ||
| Claims priority of application No. 2003-149444 (JP), filed on May 27, 2003. | ||
| Prior Publication US 2006/0079066 A1, Apr. 13, 2006 | ||
| Int. Cl. H01L 21/108 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01) | ||
| U.S. Cl. 438—381 [438/396] | 18 Claims |
| 1. A method for fabricating a semiconductor device, comprising the steps of:
(a) forming a first hydrogen barrier film;
(b) forming a capacitor device on the first hydrogen barrier film;
(c) the step of etching an exposed portion of the surface of the first hydrogen barrier film, after the step (b) has been
performed;
(d) forming a second hydrogen barrier film so that the second hydrogen barrier film covers the capacitor device and comes
into contact with the first hydrogen barrier film around the perimeter of the capacitor device, after the step (c) has been
performed, and
wherein the first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first
and second hydrogen barrier films to adhere to each other,
the step (c) dissociates bonds of combining atoms of the type commonly contained in the first and second hydrogen barrier
films to produce dangling bonds, and
the first and second hydrogen barrier films adhere to each other by chemical bonding of the atoms of the common type.
|