| US 7,556,914 B2 | ||
| Pattern formation method | ||
| Masayuki Endo, Osaka (Japan); and Masaru Sasago, Osaka (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Oct. 20, 2005, as Appl. No. 11/253,701. | ||
| Claims priority of application No. 2005-001358 (JP), filed on Jan. 06, 2005. | ||
| Prior Publication US 2006/0148266 A1, Jul. 06, 2006 | ||
| Int. Cl. G03F 7/26 (2006.01) | ||
| U.S. Cl. 430—311 [430/330] | 32 Claims |
| 1. A pattern formation method comprising the steps of:
forming a resist film on a substrate;
forming a barrier film including a base polymer and a plasticizer on said resist film;
performing pattern exposure by selectively irradiating said resist film through said barrier film with exposing light with
a liquid provided on said barrier film;
removing said barrier film;
forming, after the pattern exposure, a resist pattern made of said resist film by developing said resist film after removing
said barrier film; and
annealing said barrier film before the step of performing pattern exposure.
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