| US 7,394,704 B2 | ||
| Non-volatile semiconductor memory device, electronic card using the same and electronic apparatus | ||
| Tomoharu Tanaka, Yokohama (Japan); Khandker N. Quader, Sunnyvale, Calif. (US); Hiroyuki Dohmae, Yokohama (Japan); Atsushi Inoue, Irvine, Calif. (US); and Takeaki Sato, Meerbusch (Germany) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan); and Sandisk Corporation, Sunnyvale, Calif. (US) | ||
| Filed on Nov. 30, 2005, as Appl. No. 11/289,509. | ||
| Application 11/289509 is a continuation of application No. 10/823737, filed on Apr. 14, 2004, granted, now 6,990,018. | ||
| Claims priority of application No. 2003-114762 (JP), filed on Apr. 18, 2003. | ||
| Prior Publication US 2006/0077712 A1, Apr. 13, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 7/10 (2006.01) | ||
| U.S. Cl. 365—189.01 [365/185.17; 365/185.26; 365/185.33; 365/189.04] | 6 Claims |
| 1. A non-volatile semiconductor memory device comprising:
a plurality of non-volatile semiconductor memory cells;
an interface; and
a control circuit for controlling the non-volatile semiconductor memory cells,
wherein the device supports a first output mode for continuously outputting (N+M)-byte (N is the n-th power of 2, n is a positive
integer) data via the interface, and a second output mode for continuously outputting K-byte (K is the k-th power of 2, k
is a positive integer) data via the interface, and
wherein the first output mode is substantially transferred to output standby state after continuously outputting the data,
and the second output mode is automatically transferred to a normal operation mode after continuously outputting the data.
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