| US 7,394,684 B2 | ||
| Spin-injection magnetic random access memory | ||
| Tomoaki Inokuchi, Kawasaki (Japan); Yoshiaki Saito, Kawasaki (Japan); and Hideyuki Sugiyama, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Mar. 13, 2006, as Appl. No. 11/373,303. | ||
| Claims priority of application No. 2005-315459 (JP), filed on Oct. 28, 2005. | ||
| Prior Publication US 2007/0097736 A1, May 03, 2007 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—158 [365/145] | 25 Claims |
| 1. A spin-injection magnetic random access memory comprising:
a magnetoresistive element;
a write circuit which executes writing with respect to the magnetoresistive element by use of spin-polarized electrons generated
by a spin-injection current; and
a write assist circuit which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization
of the magnetoresistive element during the writing.
|