| US 7,394,626 B2 | ||
| Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same | ||
| Yoshiyuki Fukumoto, Tokyo (Japan); Ken-ichi Shimura, Tokyo (Japan); and Atsushi Kamijo, Tokyo (Japan) | ||
| Assigned to NEC Corporation, Tokyo (Japan) | ||
| Filed on Oct. 31, 2003, as Appl. No. 10/697,124. | ||
| Claims priority of application No. 2002/319928 (JP), filed on Nov. 01, 2002. | ||
| Prior Publication US 2004/0145850 A1, Jul. 29, 2004 | ||
| Int. Cl. G11B 5/39 (2006.01) | ||
| U.S. Cl. 360—324.2 [360/322] | 3 Claims |
| 1. A magnetoresistance device comprising:
a magnetoresistanee element including:
a free ferromagnetic layer having reversible spontaneous magnetization,
a fixed ferromagnetic layer having fixed spontaneous magnetization, and
a tunnel dielectric layer disposed between said free and fixed ferroelectric layer;
a non-magnetic conductor providing electrical connection between said magnetoresistance element to another element; and
a diffusion barrier structure disposed between said conductor and said magnetoresistance element, wherein said diffusion barrier
structure is formed of material selected from the group consisting of MgOx, CaOx, LiOx, and HfOx.
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