| US 7,554,856 B2 | ||
| Memory cell | ||
| Giacomo Curatolo, Dresden (Germany); and Rico Srowik, Dresden (Germany) | ||
| Assigned to Qimonda Flash GmbH & Co. KG, Dresden (Germany) | ||
| Filed on Oct. 06, 2006, as Appl. No. 11/544,287. | ||
| Prior Publication US 2008/0084757 A1, Apr. 10, 2008 | ||
| Int. Cl. G11C 7/10 (2006.01) | ||
| U.S. Cl. 365—189.011 [365/189.15] | 16 Claims |
| 1. A method of reading memory, the method comprising:
simultaneously sensing data signals provided by a plurality of memory cells;
providing a data signal from each of said plurality of memory cells corresponding to one of at least two programming states;
combining said provided data signal from each of said memory cells wherein the combined plurality of data signals representing
programming states comprise a number of programming states greater than a number of memory cells in the plurality of memory
cells; and
processing the data signal and providing binary data representative of the data signal, wherein the binary data includes a
number of information bits equal to the number of memory cells.
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