| US 7,554,265 B2 | ||
| Display device | ||
| Hiromichi Godo, Atsugi (Japan); Tomoe Matsubara, Hachiouji (Japan); and Masayuki Sakakura, Ebina (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Jun. 23, 2005, as Appl. No. 11/159,351. | ||
| Claims priority of application No. 2004-188827 (JP), filed on Jun. 25, 2004. | ||
| Prior Publication US 2005/0285516 A1, Dec. 29, 2005 | ||
| Int. Cl. H01J 1/62 (2006.01); H01J 63/04 (2006.01) | ||
| U.S. Cl. 313—506 [313/504; 359/580; 359/586] | 42 Claims |
| 1. A display device comprising:
a substrate;
a thin film transistor including a semiconductor layer formed over the substrate;
a wiring electrically connected to the semiconductor layer;
a light-emitting element comprising:
a first electrode electrically connected to the wiring;
a light emitting layer over the first electrode; and
a second electrode over the light emitting layer, and
a plurality of layers formed between the substrate and the light-emitting element, including:
a first layer having a refraction factor n1,
a second layer over the first layer, having a refraction factor n2, and
a third layer over the second layer, having a refraction factor n3,
wherein n1<n2>n3,
wherein an optical thickness of the second layer is substantially equal to the integral multiple of λ/2, and
wherein a center wavelength of a light emitted from the light-emitting element is λ.
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