| US 7,554,173 B2 | ||
| Semiconductor device | ||
| Takashi Inaguchi, Tokyo (Japan); Takeshi Ohi, Tokyo (Japan); Katsuhiko Fukuhara, Tokyo (Japan); Naoshi Yamada, Tokyo (Japan); Yoshitsugu Inaba, Tokyo (Japan); and Takao Mitsuhashi, Tokyo (Japan) | ||
| Assigned to Mitsubishi Electric Corporation, Tokyo (Japan) | ||
| Appl. No. 11/722,112 PCT Filed Dec. 19, 2005, PCT No. PCT/JP2005/023253 § 371(c)(1), (2), (4) Date Jun. 19, 2007, PCT Pub. No. WO2006/068082, PCT Pub. Date Jun. 29, 2006. |
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| Claims priority of application No. 2004-371133 (JP), filed on Dec. 22, 2004. | ||
| Prior Publication US 2008/0006897 A1, Jan. 10, 2008 | ||
| Int. Cl. H01L 29/00 (2006.01) | ||
| U.S. Cl. 257—536 [257/539; 257/E27.016; 257/E29.066] | 13 Claims |
| 1. A semiconductor device, comprising:
a semiconductor chip having an emitter-side main electrode and a collector-side main electrode;
a variable resistor element, which is bonded onto said emitter-side main electrode and which has a resistance value that changes
according to temperature, wherein said variable resistor element includes
a first electrode on a part of a surface or within said variable resistor element, and
a second electrode formed on a part of the surface or within said variable resistor element, but not contacting said first
electrode, of said variable resistor element, and
a power supply connected between said first and second electrodes and independent of said semiconductor chip.
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