US 7,554,144 B2
Memory device and manufacturing method
Erh-Kun Lai, Longjing Shiang (Taiwan); Chiahua Ho, Kaoshing (Taiwan); and Kuang Yeu Hsieh, Hsinchu County (Taiwan)
Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan)
Filed on Apr. 17, 2006, as Appl. No. 11/279,945.
Prior Publication US 2007/0241371 A1, Oct. 18, 2007
Int. Cl. H01L 29/417 (2006.01)
U.S. Cl. 257—295  [257/E45.002; 438/3] 11 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first electrode having a first outer surface,
a second electrode having a second outer surface;
an electrode-separating, insulating member between the first electrode and the second electrode,
the insulating member comprising upwardly and inwardly tapering surfaces connected by a surface segment;
portions of the first and second electrodes overlying the upwardly and inwardly tapering surfaces;
the surface segment having a length between the tapering surfaces near the first and second outer surfaces; and
a bridge across the surface segment of the insulating member, the bridge contacting the first and second outer surfaces and defining an inter-electrode path between the first and second electrodes and across the insulating member, the inter-electrode path having a path length defined at least in part by the length of the surface segment, the bridge comprising memory material switchable between electrical property states by the application of energy.