| US 7,554,141 B2 | ||
| Solid-state image pickup device and method of manufacturing the same | ||
| Tetsuya Yamaguchi, Tokyo (Japan); Hiroshige Goto, Yokohama (Japan); Hirofumi Yamashita, Kawasaki (Japan); Hisanori Ihara, Yokohama (Japan); Ikuko Inoue, Yokohama (Japan); and Nagataka Tanaka, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Mar. 30, 2006, as Appl. No. 11/392,616. | ||
| Claims priority of application No. 2005-104896 (JP), filed on Mar. 31, 2005. | ||
| Prior Publication US 2006/0219867 A1, Oct. 05, 2006 | ||
| Int. Cl. H01L 31/00 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01) | ||
| U.S. Cl. 257—292 [257/446] | 17 Claims |
| 1. A solid-state image pickup device comprising:
a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer
containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first
P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body;
a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently
of each other in respective positions in a surface portion of the first N-type semiconductor layer; and
a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions,
which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type
semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface
portion of the first P-type semiconductor layer,
wherein the concentration of the P-type impurities contained in the substrate body is higher than that of the P-type impurities
contained in the first P-type semiconductor layer.
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