| US 7,554,125 B2 | ||
| Multi-layer electrode and compound semiconductor light emitting device comprising the same | ||
| Joon-seop Kwak, Gyeonggi-do (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of) | ||
| Filed on Sep. 30, 2005, as Appl. No. 11/239,349. | ||
| Claims priority of application No. 10-2004-0087041 (KR), filed on Oct. 29, 2004. | ||
| Prior Publication US 2006/0091405 A1, May 04, 2006 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—79 | 28 Claims |
| 1. A multi-layer electrode of a compound semiconductor light emitting device, which is formed on a p-type compound semiconductor
layer of the compound semiconductor light emitting device, the multi-layer electrode comprising:
a first electrode layer on the p-type compound semiconductor layer which comprises a substance selected from the group consisting
of a transparent conductive oxide, a non-conductive oxide, and a nitride; and
a second electrode layer on the first electrode layer which comprises a substance selected from the group consisting of a
transparent conductive oxide, a non-conductive oxide, and a nitride,
wherein, for the first electrode layer and the second electrode layer, independently:
the transparent conductive oxide is an oxide of at least one element selected from the group consisting of Zn, Ga, Cd, Mg,
Be, Ag, Mo, V, Cu, Ir, Rh, Ru, Co, Mn and La;
the non-conductive oxide is an oxide of at least one element selected from the group consisting of Si, Al, Zr, Ti, and Hf;
and
the nitride is a nitride of at least one element selected from the group consisting of Si, Al, Zr, Ti, and Mo.
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