	US 7,553,775 B2
	Method for coating semiconductor surface, process for production of semiconductor particles using said method, and optical element using said semiconductor particles
Kazushige Yamamoto, Kanagawa-ken (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Jul. 18, 2005, as Appl. No. 11/182,865.
Claims priority of application No. 2004-250008 (JP), filed on Aug. 30, 2004.
Prior Publication US 2006/0046447 A1, Mar. 02, 2006
Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/302 (2006.01)

U.S. Cl. 438—762 [438/763; 438/689]

13 Claims

1. A method for coating a semiconductor surface, comprising:

(1) drop-wise adding an inert organic solvent-soluble, electron-donating reducing agent to a solution of a semiconductor material which comprises a group 4 element selected from the group consisting of silicon, germanium, carbon, and tin, in the inert organic solvent, thereby obtaining an intermediate where the surface of the semiconductor material is coated with a metal derived from said reducing agent; and

(2) drop-wise adding a compound with an electron withdrawing group to the intermediate obtained in (2), said compound comprising an element selected from the group consisting of group 4 elements and transition metal elements, to coat the surface of the semiconductor material with a monoatomic layer of the group 4 element or the transition metal element derived from said compound with the electron withdrawing group.